Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix
Identifieur interne : 00DD62 ( Main/Repository ); précédent : 00DD61; suivant : 00DD63Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix
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Abstract
The structural properties of InAs nanocrystals formed in Si by sequential implantation of In and As ions are studied in detail. We use a combination of x-ray diffraction, Rutherford backscattering spectroscopy, channeling, and transmission electron microscopy analyses to demonstrate that, regardless of the order in which ion species are implanted, InAs nanocrystals can be produced in Si (100) by means of sequential ion implantation complemented by subsequent thermal annealing. Whichever the order of implantation is, the nanocrystals are facetted and terminated by (111) planes, the epitaxial relationship being cube-on-cube, (100)InAs∥(100)Si with [001]InAs∥[001]Si, for most InAs nanocrystals. The size distribution of nanocrystals is much affected by the sequence of implantation. With As ions implanted first, nanocrystals of different sizes are concentrated within one and the same layer under the samples surface. In contrast, when In ions are implanted first, nanocrystals of different sizes are produced separately in space, forming a three-layer structure. As a consequence, inverting the order of implantation entails considerable changes in the morphology of the InAs nanocrystals obtained, affecting both their concentration profile and their size distribution. The result has a significant impact on the optical properties of the resulting samples. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix</title><author><name sortKey="Tchebotareva, A" uniqKey="Tchebotareva A">A. Tchebotareva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7</wicri:regionArea><wicri:noRegion>Quebec H3C 3J7</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Ecole Polytechnique de Montreal, P.O. Box 6079, Station Centre-Ville, Montreal, Quebec H3C 3A7, Canada</s1></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Ecole Polytechnique de Montreal, P.O. Box 6079, Station Centre-Ville, Montreal, Quebec H3C 3A7</wicri:regionArea><wicri:noRegion>Quebec H3C 3A7</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6057</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge</wicri:cityArea></affiliation></author><author><name sortKey="Brebner, J L" uniqKey="Brebner J">J. L. Brebner</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7</wicri:regionArea><wicri:noRegion>Quebec H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Roorda, S" uniqKey="Roorda S">S. Roorda</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7</wicri:regionArea><wicri:noRegion>Quebec H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Desjardins, P" uniqKey="Desjardins P">P. Desjardins</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7</wicri:regionArea><wicri:noRegion>Quebec H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="White, C W" uniqKey="White C">C. W. White</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7</wicri:regionArea><wicri:noRegion>Quebec H3C 3J7</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0483973</idno><date when="2002-10-15">2002-10-15</date><idno type="stanalyst">PASCAL 02-0483973 AIP</idno><idno type="RBID">Pascal:02-0483973</idno><idno type="wicri:Area/Main/Corpus">00E812</idno><idno type="wicri:Area/Main/Repository">00DD62</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Channeling</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Ion implantation</term><term>Nanostructured materials</term><term>RBS</term><term>Transmission electron microscopy</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6146</term><term>6172T</term><term>6172C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Nanomatériau</term><term>Implantation ion</term><term>Recuit</term><term>Diffraction RX</term><term>RBS</term><term>Canalisation particule</term><term>Microscopie électronique transmission</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The structural properties of InAs nanocrystals formed in Si by sequential implantation of In and As ions are studied in detail. We use a combination of x-ray diffraction, Rutherford backscattering spectroscopy, channeling, and transmission electron microscopy analyses to demonstrate that, regardless of the order in which ion species are implanted, InAs nanocrystals can be produced in Si (100) by means of sequential ion implantation complemented by subsequent thermal annealing. Whichever the order of implantation is, the nanocrystals are facetted and terminated by (111) planes, the epitaxial relationship being cube-on-cube, (100)<sub>InAs</sub>∥(100)<sub>Si</sub> with [001]<sub>InAs</sub>∥[001]<sub>Si</sub>, for most InAs nanocrystals. The size distribution of nanocrystals is much affected by the sequence of implantation. With As ions implanted first, nanocrystals of different sizes are concentrated within one and the same layer under the samples surface. In contrast, when In ions are implanted first, nanocrystals of different sizes are produced separately in space, forming a three-layer structure. As a consequence, inverting the order of implantation entails considerable changes in the morphology of the InAs nanocrystals obtained, affecting both their concentration profile and their size distribution. The result has a significant impact on the optical properties of the resulting samples. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>92</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix</s1></fA08><fA11 i1="01" i2="1"><s1>TCHEBOTAREVA (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BREBNER (J. L.)</s1></fA11><fA11 i1="03" i2="1"><s1>ROORDA (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>DESJARDINS (P.)</s1></fA11><fA11 i1="05" i2="1"><s1>WHITE (C. W.)</s1></fA11><fA14 i1="01"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Universite de Montreal, P.O. Box 6128, Station Centre-Ville, Montreal, Quebec H3C 3J7, Canada</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Departement de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces, Ecole Polytechnique de Montreal, P.O. Box 6079, Station Centre-Ville, Montreal, Quebec H3C 3A7, Canada</s1></fA14><fA14 i1="03"><s1>Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6057</s1></fA14><fA20><s1>4664-4671</s1></fA20><fA21><s1>2002-10-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0483973</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The structural properties of InAs nanocrystals formed in Si by sequential implantation of In and As ions are studied in detail. We use a combination of x-ray diffraction, Rutherford backscattering spectroscopy, channeling, and transmission electron microscopy analyses to demonstrate that, regardless of the order in which ion species are implanted, InAs nanocrystals can be produced in Si (100) by means of sequential ion implantation complemented by subsequent thermal annealing. Whichever the order of implantation is, the nanocrystals are facetted and terminated by (111) planes, the epitaxial relationship being cube-on-cube, (100)<sub>InAs</sub>∥(100)<sub>Si</sub> with [001]<sub>InAs</sub>∥[001]<sub>Si</sub>, for most InAs nanocrystals. The size distribution of nanocrystals is much affected by the sequence of implantation. With As ions implanted first, nanocrystals of different sizes are concentrated within one and the same layer under the samples surface. In contrast, when In ions are implanted first, nanocrystals of different sizes are produced separately in space, forming a three-layer structure. As a consequence, inverting the order of implantation entails considerable changes in the morphology of the InAs nanocrystals obtained, affecting both their concentration profile and their size distribution. The result has a significant impact on the optical properties of the resulting samples. © 2002 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60A46</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A72T</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A72C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6146</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6172T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Nanomatériau</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nanostructured materials</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Implantation ion</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Ion implantation</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Annealing</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>RBS</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>RBS</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Canalisation particule</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Channeling</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Transmission electron microscopy</s0></fC03><fN21><s1>280</s1></fN21><fN47 i1="01" i2="1"><s0>0240M000305</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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